A result of the optimized gate oxide thickness our gate oxide screening is more efficient when compared with competing SiC MOSFET manufacturers. For off state stress protection by deep p-locations is adopted, for on-state a thick oxide is made use of in order to bypass the boundaries to screen remaining https://www.facebook.com/permalink.php?story_fbid=pfbid0iHPXBfuTV48a11S6im2HVgkDj4HGpowo18T13Z5k4EmaMwSQCcam91GuEfPNAYjbl&id=61562415773754&__cft__[0]=AZVxsKklkxmhMCjUYdW7D2vGozb44w43Be_2d51MC-1NCTqNADRyOxYBYlDMffTdzf2PhN1Wviaw4ieF8AtNtm5u_K9rSSjNmNYrPsWMyH0RKjC2MjEm3SbHcsssb6P9E2nIWBUVazsAkP9yLtOvwMLMiHobsEEf6zoGHp0ly1ruvIA4Y7lSf3Dg4dV99e__H9GCeaPn0KNBXIuylUDis3LG&__tn__=%2CO%2CP-R